BSO613SPVGXUMA1 vs BSS127H6327XTSA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSO613SPVGXUMA1 disebabkan oleh Infineon dan BSS127H6327XTSA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSO613SPVGXUMA1 BSS127H6327XTSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel N-Channel SIPMOS, enhancement mode
Drain-Source Voltage (VDS) -60 V 600 V
Continuous Drain Current (ID) at TA=25C -3.44 A —
Power Dissipation (PD) at TA=25C 2.5 W —
Kemasan PG-DSO-8-6 (Power-SO-8) SOT-23-3 (PG-SOT23)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS (Trench) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max values] 4.5 V (logic level, rated)
RDS(on) at VGS=10V [DATA_NEEDED: RDS(on) max at VGS=10V] —
RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) max at VGS=4.5V] —
Gambaran Suhu Operasi -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs) —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max +/-V] [DATA_NEEDED: VGS max rating]
Aras MSL MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8) [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant (lead-free)
Lead-Free Yes —
Avalanche Rated Yes (per Infineon OptiMOS family) —
Kiraan Pin 8 (6 active, 2 thermal/NC) 3
Continuous Drain Current (ID) — 21 mA (Ta)
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed ID limit]
On-State Resistance (RDS(on)) max — 500 ohm at ID = 21 mA
Total Power Dissipation (Ptot) — 500 mW (Ta)
Suhu Hubungan Operasi — -55 C to +150 C
dv/dt Rated — Yes
Automotive Qualification — AEC-Q101
Boson Bebas — Yes, per IEC 61249-2-21

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga