BSO613SPVGXUMA1 vs BSS127H6327XTSA2 比較
詳細並排比較 BSO613SPVGXUMA1 由 Infineon 與 BSS127H6327XTSA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSO613SPVGXUMA1 | BSS127H6327XTSA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | P-Channel | N-Channel SIPMOS, enhancement mode |
| Drain-Source Voltage (VDS) | -60 V | 600 V |
| Continuous Drain Current (ID) at TA=25C | -3.44 A | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| 封裝 | PG-DSO-8-6 (Power-SO-8) | SOT-23-3 (PG-SOT23) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS (Trench) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | 4.5 V (logic level, rated) |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) max at VGS=4.5V] | — |
| 工作溫度範圍 | -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-V] | [DATA_NEEDED: VGS max rating] |
| MSL 等級 | MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8) | [DATA_NEEDED: MSL rating] |
| RoHS 狀態 | Compliant | Compliant (lead-free) |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes (per Infineon OptiMOS family) | — |
| 腳位數 | 8 (6 active, 2 thermal/NC) | 3 |
| Continuous Drain Current (ID) | — | 21 mA (Ta) |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed ID limit] |
| On-State Resistance (RDS(on)) max | — | 500 ohm at ID = 21 mA |
| Total Power Dissipation (Ptot) | — | 500 mW (Ta) |
| 工作接面溫度 | — | -55 C to +150 C |
| dv/dt Rated | — | Yes |
| Automotive Qualification | — | AEC-Q101 |
| 無鹵素 | — | Yes, per IEC 61249-2-21 |