BSP129H6327XTSA1 vs BSP135H6906XTSA1 Perbandingan

Perbandingan bersamaan detil BSP129H6327XTSA1 dari Infineon dan BSP135H6906XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSP135H6906XTSA1 BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSP129H6327XTSA1 BSP135H6906XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel, Depletion Mode N-Channel Depletion Mode
Drain-Source Voltage (VDS) 240 V —
Continuous Drain Current (ID) at TA=25C 350 mA 120 mA
On-Resistance RDS(on) max 4.2 ohm (some sources 6 ohm) —
Power Dissipation (PD) at TA=25C 1.8 W —
Paket PG-SOT223-4 (SOT-223, 3+Tab) PG-SOT223-4 (SOT-223, 3+tab)
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55 C to +150 C (junction) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Threshold Voltage VGS(off) [DATA_NEEDED: depletion threshold VGS(off)] —
dv/dt Ruggedness Yes (rated) —
Automotive Qualification AEC-Q101 qualified AEC-Q101 (per datasheets.com parametric record)
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Level MSL [DATA_NEEDED: MSL rating] 1 (unlimited)
Process Technology SIPMOS (vertical DMOS) —
Drain Terminal Tab (pin 4) —
Drain-Source Voltage (VDS) Max — 600 V
RDS(on) Max at VGS=0V — 45 Ohm
Power Dissipation (PD) Max — 1.8 W
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(off)) — Depletion mode (normally-on)
Rentang Suhu Kerja — -55C to +150C
Jumlah Pin — 4 (3 leads + drain tab)
Technology — SIPMOS (planar high-voltage)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon