BSP129H6327XTSA1 vs BSP135H6906XTSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSP129H6327XTSA1 sa pamamagitan ng Infineon at BSP135H6906XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSP135H6906XTSA1 BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSP129H6327XTSA1 BSP135H6906XTSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel, Depletion Mode N-Channel Depletion Mode
Drain-Source Voltage (VDS) 240 V —
Continuous Drain Current (ID) at TA=25C 350 mA 120 mA
On-Resistance RDS(on) max 4.2 ohm (some sources 6 ohm) —
Power Dissipation (PD) at TA=25C 1.8 W —
Packhaging PG-SOT223-4 (SOT-223, 3+Tab) PG-SOT223-4 (SOT-223, 3+tab)
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -55 C to +150 C (junction) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Threshold Voltage VGS(off) [DATA_NEEDED: depletion threshold VGS(off)] —
dv/dt Ruggedness Yes (rated) —
Automotive Qualification AEC-Q101 qualified AEC-Q101 (per datasheets.com parametric record)
Tindminan RoHS Compliant Compliant
Lead-Free Yes Yes
Level ng MSL [DATA_NEEDED: MSL rating] 1 (unlimited)
Process Technology SIPMOS (vertical DMOS) —
Drain Terminal Tab (pin 4) —
Drain-Source Voltage (VDS) Max — 600 V
RDS(on) Max at VGS=0V — 45 Ohm
Power Dissipation (PD) Max — 1.8 W
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(off)) — Depletion mode (normally-on)
Hanay ng Temperature na Operasyon — -55C to +150C
Bilang ng Pin — 4 (3 leads + drain tab)
Technology — SIPMOS (planar high-voltage)

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