BSP135H6906XTSA1 vs BSP316PH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSP135H6906XTSA1 dari Infineon dan BSP316PH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSP135H6906XTSA1 BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSP135H6906XTSA1 BSP316PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel Depletion Mode P-Channel
Drain-Source Voltage (VDS) Max 600 V —
Continuous Drain Current (ID) at TA=25C 120 mA -680 mA
RDS(on) Max at VGS=0V 45 Ohm —
Power Dissipation (PD) Max 1.8 W —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(off)) Depletion mode (normally-on) —
Rentang Suhu Kerja -55C to +150C -55 C to +150 C (junction)
Paket PG-SOT223-4 (SOT-223, 3+tab) PG-SOT223-4 (TO-261-4)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 4 (3 leads + drain tab) —
Technology SIPMOS (planar high-voltage) SIPMOS (P-channel MOSFET)
Level MSL 1 (unlimited) 1
Status RoHS Compliant Compliant
Automotive Qualification AEC-Q101 (per datasheets.com parametric record) —
Lead-Free Yes —
Drain-to-Source Voltage (VDS) — -100 V
Total Power Dissipation (Ptot) at TA=25C — 1.8 W
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Jumlah Pin — 3 + thermal tab
Channel Mode — Enhancement
Packaging — Tape & Reel (H6327 suffix)

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