BSP135H6906XTSA1 vs BSP316PH6327XTSA1 比較
詳細並排比較 BSP135H6906XTSA1 由 Infineon 與 BSP316PH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSP135H6906XTSA1 | BSP316PH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel Depletion Mode | P-Channel |
| Drain-Source Voltage (VDS) Max | 600 V | — |
| Continuous Drain Current (ID) at TA=25C | 120 mA | -680 mA |
| RDS(on) Max at VGS=0V | 45 Ohm | — |
| Power Dissipation (PD) Max | 1.8 W | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(off)) | Depletion mode (normally-on) | — |
| 工作溫度範圍 | -55C to +150C | -55 C to +150 C (junction) |
| 封裝 | PG-SOT223-4 (SOT-223, 3+tab) | PG-SOT223-4 (TO-261-4) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 4 (3 leads + drain tab) | — |
| Technology | SIPMOS (planar high-voltage) | SIPMOS (P-channel MOSFET) |
| MSL 等級 | 1 (unlimited) | 1 |
| RoHS 狀態 | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (per datasheets.com parametric record) | — |
| Lead-Free | Yes | — |
| Drain-to-Source Voltage (VDS) | — | -100 V |
| Total Power Dissipation (Ptot) at TA=25C | — | 1.8 W |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| 腳位數 | — | 3 + thermal tab |
| Channel Mode | — | Enhancement |
| Packaging | — | Tape & Reel (H6327 suffix) |