BSP135H6906XTSA1 vs BSP316PH6327XTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSP135H6906XTSA1 sa pamamagitan ng Infineon at BSP316PH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223
BSP316PH6327XTSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSP135H6906XTSA1 | BSP316PH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel Depletion Mode | P-Channel |
| Drain-Source Voltage (VDS) Max | 600 V | — |
| Continuous Drain Current (ID) at TA=25C | 120 mA | -680 mA |
| RDS(on) Max at VGS=0V | 45 Ohm | — |
| Power Dissipation (PD) Max | 1.8 W | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(off)) | Depletion mode (normally-on) | — |
| Hanay ng Temperature na Operasyon | -55C to +150C | -55 C to +150 C (junction) |
| Packhaging | PG-SOT223-4 (SOT-223, 3+tab) | PG-SOT223-4 (TO-261-4) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 4 (3 leads + drain tab) | — |
| Technology | SIPMOS (planar high-voltage) | SIPMOS (P-channel MOSFET) |
| Level ng MSL | 1 (unlimited) | 1 |
| Tindminan RoHS | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (per datasheets.com parametric record) | — |
| Lead-Free | Yes | — |
| Drain-to-Source Voltage (VDS) | — | -100 V |
| Total Power Dissipation (Ptot) at TA=25C | — | 1.8 W |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Bilang ng Pins | — | 3 + thermal tab |
| Channel Mode | — | Enhancement |
| Packaging | — | Tape & Reel (H6327 suffix) |