BSP315PH6327XTSA1 vs BSL308PEH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSP315PH6327XTSA1 dari Infineon dan BSL308PEH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSP315PH6327XTSA1 BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 ✓ Aktif
Infineon
BSL308PEH6327XTSA1 BSL308PEH6327XTSA1 - 30V 2A Dual P-Ch MOSFET | Infineon

BSL308PEH6327XTSA1 - 30V 2A Dual P-Ch MOSFET | Infineon

BSL308PEH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSP315PH6327XTSA1 BSL308PEH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel 2x P-Channel (Dual)
Technology OptiMOS (enhancement mode) —
Drain-Source Voltage (VDS) -60 V -30 V
Continuous Drain Current (ID) -1.17 A (Ta) -2 A (Ta)
Power Dissipation (PD) 1.8 W (Ta) 500 mW (Ta)
Gate-Source Voltage (VGS) ±20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] [DATA_NEEDED: VGS(th) typical value]
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10 V] [DATA_NEEDED: RDS(on) at VGS=10V / 4.5V]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Rentang Suhu Kerja -55 C to +150 C (junction) —
Paket PG-SOT223-4 (SOT-223-3 pinout with exposed tab) PG-TSOP6-6 (TSOT-23-6)
Tipe Mounting Surface Mount Surface Mount
Avalanche Energy Rated Yes (per datasheet) —
Lead-Free / RoHS Yes / Compliant —
Level MSL 1 (per JEDEC J-STD-020) —
Manufacturer — Infineon Technologies
Series — OptiMOS
Configuration — Dual, common source
Suhu Kerja — -55 C to +150 C (TJ)
Automotive Qualification — AEC-Q101
Jumlah Pin — 6
Channel Mode — Enhancement
Status RoHS — Compliant

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