BSP92PH6327XTSA1 vs BSD214SNH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSP92PH6327XTSA1 dari Infineon dan BSD214SNH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSP92PH6327XTSA1 BSD214SNH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS P-Channel Small-Signal Power MOSFET —
Tipe Transistor P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -250 V —
Continuous Drain Current (ID) -260 mA (Ta) —
Power Dissipation (PD) 1.8 W (Ta) —
Paket PG-SOT223-4 (SOT-223-4) SOT-363 (PG-SOT363-PO), 6-pin
Tipe Mounting Surface Mount Surface Mount
Channel Polarity P-Channel —
Suhu Kerja -55C to +150C (Tj) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS Yes / Compliant —
Level MSL 1 (unlimited) 1
Jumlah Pin 4 (Gate, Drain, Drain, Source) —
FET Type — N-Channel
Technology — MOSFET (Metal Oxide), OptiMOS
Drain-to-Source Voltage (Vdss) — 20 V
Continuous Drain Current (Id) at 25C — 1.5 A
Power Dissipation (Pd) at Ta — 500 mW
Gate Drive Voltage (Rds On rated) — 2.5 V, 4.5 V
Rds On (Max) @ Vgs=4.5V — [DATA_NEEDED: Rds On at Vgs=4.5V]
Rds On (Max) @ Vgs=2.5V — [DATA_NEEDED: Rds On at Vgs=2.5V]
Vgs(th) (typical) — [DATA_NEEDED: Vgs threshold typical]
Rentang Suhu Kerja — -55C to +150C (junction)
Automotive Qualification — AEC-Q101 qualified
Lead Plating — Pb-free
Status RoHS — Compliant
Standard Pack Quantity — 3000 (Tape & Reel)

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