BSP92PH6327XTSA1 vs BSD214SNH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP92PH6327XTSA1 disebabkan oleh Infineon dan BSD214SNH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSP92PH6327XTSA1 BSD214SNH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS P-Channel Small-Signal Power MOSFET —
Jenis Transistor P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -250 V —
Continuous Drain Current (ID) -260 mA (Ta) —
Power Dissipation (PD) 1.8 W (Ta) —
Kemasan PG-SOT223-4 (SOT-223-4) SOT-363 (PG-SOT363-PO), 6-pin
Jenis Pemasangan Surface Mount Surface Mount
Channel Polarity P-Channel —
Suhu Operasi -55C to +150C (Tj) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS Yes / Compliant —
Aras MSL 1 (unlimited) 1
Kiraan Pin 4 (Gate, Drain, Drain, Source) —
FET Type — N-Channel
Technology — MOSFET (Metal Oxide), OptiMOS
Drain-to-Source Voltage (Vdss) — 20 V
Continuous Drain Current (Id) at 25C — 1.5 A
Power Dissipation (Pd) at Ta — 500 mW
Gate Drive Voltage (Rds On rated) — 2.5 V, 4.5 V
Rds On (Max) @ Vgs=4.5V — [DATA_NEEDED: Rds On at Vgs=4.5V]
Rds On (Max) @ Vgs=2.5V — [DATA_NEEDED: Rds On at Vgs=2.5V]
Vgs(th) (typical) — [DATA_NEEDED: Vgs threshold typical]
Gambaran Suhu Operasi — -55C to +150C (junction)
Automotive Qualification — AEC-Q101 qualified
Lead Plating — Pb-free
Status RoHS — Compliant
Standard Pack Quantity — 3000 (Tape & Reel)

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