BSP92PH6327XTSA1 vs BSR316PH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSP92PH6327XTSA1 dari Infineon dan BSR316PH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSP92PH6327XTSA1 BSR316PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS P-Channel Small-Signal Power MOSFET —
Tipe Transistor P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -250 V -100 V
Continuous Drain Current (ID) -260 mA (Ta) —
Power Dissipation (PD) 1.8 W (Ta) —
Paket PG-SOT223-4 (SOT-223-4) PG-SC59-3 (SC-59 / SOT-23 equivalent)
Tipe Mounting Surface Mount Surface Mount
Channel Polarity P-Channel —
Suhu Kerja -55C to +150C (Tj) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS Yes / Compliant —
Level MSL 1 (unlimited) 1
Jumlah Pin 4 (Gate, Drain, Drain, Source) —
Part Number — BSR316PH6327XTSA1
Series — OptiMOS
FET Type — P-Channel Enhancement Mode
Continuous Drain Current (ID) at TA — -360 mA
Continuous Drain Current (ID) at TC — [DATA_NEEDED: ID at TC specific value]
On-State Resistance RDS(on) max — 1800 mOhm at VGS = -10 V
Gate Threshold Voltage VGS(th) — -1.7 V typical, -2.5 V max
Gate Charge Qg — [DATA_NEEDED: Qg total]
Power Dissipation (Tc) — 500 mW
Rentang Suhu Kerja — -55 C to +150 C (junction)
Qualification — Automotive
Status RoHS — Compliant
Polarity — P-Channel

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