BSP92PH6327XTSA1 vs BSR316PH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP92PH6327XTSA1 disebabkan oleh Infineon dan BSR316PH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSP92PH6327XTSA1 BSR316PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS P-Channel Small-Signal Power MOSFET —
Jenis Transistor P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -250 V -100 V
Continuous Drain Current (ID) -260 mA (Ta) —
Power Dissipation (PD) 1.8 W (Ta) —
Kemasan PG-SOT223-4 (SOT-223-4) PG-SC59-3 (SC-59 / SOT-23 equivalent)
Jenis Pemasangan Surface Mount Surface Mount
Channel Polarity P-Channel —
Suhu Operasi -55C to +150C (Tj) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS Yes / Compliant —
Aras MSL 1 (unlimited) 1
Kiraan Pin 4 (Gate, Drain, Drain, Source) —
Part Number — BSR316PH6327XTSA1
Series — OptiMOS
FET Type — P-Channel Enhancement Mode
Continuous Drain Current (ID) at TA — -360 mA
Continuous Drain Current (ID) at TC — [DATA_NEEDED: ID at TC specific value]
On-State Resistance RDS(on) max — 1800 mOhm at VGS = -10 V
Gate Threshold Voltage VGS(th) — -1.7 V typical, -2.5 V max
Gate Charge Qg — [DATA_NEEDED: Qg total]
Power Dissipation (Tc) — 500 mW
Gambaran Suhu Operasi — -55 C to +150 C (junction)
Qualification — Automotive
Status RoHS — Compliant
Polarity — P-Channel

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga