BSP92PH6327XTSA1 vs BSR316PH6327XTSA1 比較
詳細並排比較 BSP92PH6327XTSA1 由 Infineon 與 BSR316PH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSP92PH6327XTSA1 | BSR316PH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS P-Channel Small-Signal Power MOSFET | — |
| 電晶體類型 | P-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | -250 V | -100 V |
| Continuous Drain Current (ID) | -260 mA (Ta) | — |
| Power Dissipation (PD) | 1.8 W (Ta) | — |
| 封裝 | PG-SOT223-4 (SOT-223-4) | PG-SC59-3 (SC-59 / SOT-23 equivalent) |
| 安裝類型 | Surface Mount | Surface Mount |
| Channel Polarity | P-Channel | — |
| 工作溫度 | -55C to +150C (Tj) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| MSL 等級 | 1 (unlimited) | 1 |
| 腳位數 | 4 (Gate, Drain, Drain, Source) | — |
| Part Number | — | BSR316PH6327XTSA1 |
| Series | — | OptiMOS |
| FET Type | — | P-Channel Enhancement Mode |
| Continuous Drain Current (ID) at TA | — | -360 mA |
| Continuous Drain Current (ID) at TC | — | [DATA_NEEDED: ID at TC specific value] |
| On-State Resistance RDS(on) max | — | 1800 mOhm at VGS = -10 V |
| Gate Threshold Voltage VGS(th) | — | -1.7 V typical, -2.5 V max |
| Gate Charge Qg | — | [DATA_NEEDED: Qg total] |
| Power Dissipation (Tc) | — | 500 mW |
| 工作溫度範圍 | — | -55 C to +150 C (junction) |
| Qualification | — | Automotive |
| RoHS 狀態 | — | Compliant |
| Polarity | — | P-Channel |