BSP92PH6327XTSA1 vs BSS87H6327FTSA1 Perbandingan
Perbandingan bersamaan detil BSP92PH6327XTSA1 dari Infineon dan BSS87H6327FTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSP92PH6327XTSA1 | BSS87H6327FTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS P-Channel Small-Signal Power MOSFET | — |
| Tipe Transistor | P-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | -250 V | 240 V |
| Continuous Drain Current (ID) | -260 mA (Ta) | 260 mA (Ta) |
| Power Dissipation (PD) | 1.8 W (Ta) | 1 W (Ta) |
| Paket | PG-SOT223-4 (SOT-223-4) | PG-SOT89-4-2 (SOT-89) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Channel Polarity | P-Channel | — |
| Suhu Kerja | -55C to +150C (Tj) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| Level MSL | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| Jumlah Pin | 4 (Gate, Drain, Drain, Source) | 3 (Gate / Drain / Source) |
| FET Type | — | N-Channel enhancement-mode |
| Drain-Source On-Resistance (RDS(on)) | — | 6 ohm max at VGS=10V |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Rentang Suhu Kerja | — | -55C to +150C (junction) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Status RoHS | — | Compliant |
| Lead-Free / Pb-Free | — | Yes (Pb-free plating) |
| Process Technology | — | Vertical DMOS |