BSP92PH6327XTSA1 vs BSS87H6327FTSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSP92PH6327XTSA1 sa pamamagitan ng Infineon at BSS87H6327FTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSS87H6327FTSA1 BSS87H6327FTSA1 - 240V N-Ch MOSFET, 260mA, SOT-89 | Infineon

BSS87H6327FTSA1 - 240V N-Ch MOSFET, 260mA, SOT-89 | Infineon

BSS87H6327FTSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSP92PH6327XTSA1 BSS87H6327FTSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Product Family OptiMOS P-Channel Small-Signal Power MOSFET —
Uri ng Transistor P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -250 V 240 V
Continuous Drain Current (ID) -260 mA (Ta) 260 mA (Ta)
Power Dissipation (PD) 1.8 W (Ta) 1 W (Ta)
Packhaging PG-SOT223-4 (SOT-223-4) PG-SOT89-4-2 (SOT-89)
Uri ng Pagpapasok Surface Mount Surface Mount
Channel Polarity P-Channel —
Temperature na Operasyon -55C to +150C (Tj) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] [DATA_NEEDED: VGS(th) typical/min/max]
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS Yes / Compliant —
Level ng MSL 1 (unlimited) 1 (per JEDEC J-STD-020)
Bilang ng Pin 4 (Gate, Drain, Drain, Source) 3 (Gate / Drain / Source)
FET Type — N-Channel enhancement-mode
Drain-Source On-Resistance (RDS(on)) — 6 ohm max at VGS=10V
Gate-Source Voltage (VGS) — +/-20 V
Hanay ng Temperature na Operasyon — -55C to +150C (junction)
Automotive Qualification — AEC-Q101 qualified
Tindminan RoHS — Compliant
Lead-Free / Pb-Free — Yes (Pb-free plating)
Process Technology — Vertical DMOS

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