BSP92PH6327XTSA1 vs BSS87H6327FTSA1 比較
詳細並排比較 BSP92PH6327XTSA1 由 Infineon 與 BSS87H6327FTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSP92PH6327XTSA1 | BSS87H6327FTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS P-Channel Small-Signal Power MOSFET | — |
| 電晶體類型 | P-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | -250 V | 240 V |
| Continuous Drain Current (ID) | -260 mA (Ta) | 260 mA (Ta) |
| Power Dissipation (PD) | 1.8 W (Ta) | 1 W (Ta) |
| 封裝 | PG-SOT223-4 (SOT-223-4) | PG-SOT89-4-2 (SOT-89) |
| 安裝類型 | Surface Mount | Surface Mount |
| Channel Polarity | P-Channel | — |
| 工作溫度 | -55C to +150C (Tj) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| MSL 等級 | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| 腳位數 | 4 (Gate, Drain, Drain, Source) | 3 (Gate / Drain / Source) |
| FET Type | — | N-Channel enhancement-mode |
| Drain-Source On-Resistance (RDS(on)) | — | 6 ohm max at VGS=10V |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| 工作溫度範圍 | — | -55C to +150C (junction) |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS 狀態 | — | Compliant |
| Lead-Free / Pb-Free | — | Yes (Pb-free plating) |
| Process Technology | — | Vertical DMOS |