BSR316PH6327XTSA1 vs BSR315PH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSR316PH6327XTSA1 dari Infineon dan BSR315PH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSR316PH6327XTSA1 BSR315PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSR316PH6327XTSA1 BSR315PH6327XTSA1
Series OptiMOS OptiMOS P-Channel
FET Type P-Channel Enhancement Mode P-Channel, Enhancement Mode
Drain-Source Voltage (VDS) -100 V -60 V
Continuous Drain Current (ID) at TA -360 mA —
Continuous Drain Current (ID) at TC [DATA_NEEDED: ID at TC specific value] —
On-State Resistance RDS(on) max 1800 mOhm at VGS = -10 V —
Gate Threshold Voltage VGS(th) -1.7 V typical, -2.5 V max —
Gate Charge Qg [DATA_NEEDED: Qg total] —
Power Dissipation (Tc) 500 mW —
Paket PG-SC59-3 (SC-59 / SOT-23 equivalent) PG-SC59-3 / SOT-23-3
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 C to +150 C (junction) -55 C to +150 C (TJ)
Qualification Automotive —
Status RoHS Compliant Compliant
Level MSL 1 —
Polarity P-Channel —
Continuous Drain Current (ID) — -620 mA (Ta)
Power Dissipation (PD) — 500 mW (Ta)
On-State Resistance (RDS(on)) — 800 mOhm @ -620 mA, -10 V
Gate Threshold Voltage (VGS(th)) — ±20 V (max VGS)
Input Capacitance (Ciss) — 176 pF @ 25 V
Total Gate Charge (Qg) — 6 nC @ 10 V
Jumlah Pin — 3
Packaging — Tape & Reel (TR)
Automotive Qualified — Yes (per Infineon product family marking)

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