BSR316PH6327XTSA1 vs BSR315PH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSR316PH6327XTSA1 disebabkan oleh Infineon dan BSR315PH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSR316PH6327XTSA1 BSR315PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSR316PH6327XTSA1 BSR315PH6327XTSA1
Series OptiMOS OptiMOS P-Channel
FET Type P-Channel Enhancement Mode P-Channel, Enhancement Mode
Drain-Source Voltage (VDS) -100 V -60 V
Continuous Drain Current (ID) at TA -360 mA —
Continuous Drain Current (ID) at TC [DATA_NEEDED: ID at TC specific value] —
On-State Resistance RDS(on) max 1800 mOhm at VGS = -10 V —
Gate Threshold Voltage VGS(th) -1.7 V typical, -2.5 V max —
Gate Charge Qg [DATA_NEEDED: Qg total] —
Power Dissipation (Tc) 500 mW —
Kemasan PG-SC59-3 (SC-59 / SOT-23 equivalent) PG-SC59-3 / SOT-23-3
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 C to +150 C (junction) -55 C to +150 C (TJ)
Qualification Automotive —
Status RoHS Compliant Compliant
Aras MSL 1 —
Polarity P-Channel —
Continuous Drain Current (ID) — -620 mA (Ta)
Power Dissipation (PD) — 500 mW (Ta)
On-State Resistance (RDS(on)) — 800 mOhm @ -620 mA, -10 V
Gate Threshold Voltage (VGS(th)) — ±20 V (max VGS)
Input Capacitance (Ciss) — 176 pF @ 25 V
Total Gate Charge (Qg) — 6 nC @ 10 V
Kiraan Pin — 3
Packaging — Tape & Reel (TR)
Automotive Qualified — Yes (per Infineon product family marking)

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