BSS126H6327XTSA2 vs BSS123NH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS126H6327XTSA2 dari Infineon dan BSS123NH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSS126H6327XTSA2 BSS123NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel Depletion Mode N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) Max 600 V —
Continuous Drain Current (ID) at Ta 21 mA —
Power Dissipation (PD) at Ta 500 mW —
On-Resistance (RDS(on)) Max 500 ohm (typical for depletion-mode) —
Gate-Source Voltage (VGS) Range [DATA_NEEDED: VGS max/min] —
Technology SIPMOS (DMOS) —
Paket SOT-23-3 (PG-SOT23) PG-SOT23 (SOT-23-3)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (junction, typical) -55 °C to +150 °C (junction)
Jumlah Pin 3 —
Configuration Single —
Channel Mode Depletion (normally-on at VGS = 0) —
Level MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Status RoHS Compliant —
Lead-Free Yes —
Bebas Halogen Yes (Infineon 'green' package) —
Manufacturer — Infineon Technologies
Part Number — BSS123NH6327XTSA1
Part Status — Active
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) — 190 mA (Ta)
Power Dissipation (PD) — 500 mW (Ta)
RDS(on) Max — 6 Ω @ VGS = 10 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical and max VGS(th)]
Gate-Source Voltage Max (VGS) — ±20 V
Qualification — AEC-Q101 (automotive)
RoHS Compliance — Yes (Pb-free lead plating)

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