BSS126H6327XTSA2 vs BSS123NH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS126H6327XTSA2 disebabkan oleh Infineon dan BSS123NH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS126H6327XTSA2 BSS123NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel Depletion Mode N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) Max 600 V —
Continuous Drain Current (ID) at Ta 21 mA —
Power Dissipation (PD) at Ta 500 mW —
On-Resistance (RDS(on)) Max 500 ohm (typical for depletion-mode) —
Gate-Source Voltage (VGS) Range [DATA_NEEDED: VGS max/min] —
Technology SIPMOS (DMOS) —
Kemasan SOT-23-3 (PG-SOT23) PG-SOT23 (SOT-23-3)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction, typical) -55 °C to +150 °C (junction)
Kiraan Pin 3 —
Configuration Single —
Channel Mode Depletion (normally-on at VGS = 0) —
Aras MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Status RoHS Compliant —
Lead-Free Yes —
Boson Bebas Yes (Infineon 'green' package) —
Manufacturer — Infineon Technologies
Part Number — BSS123NH6327XTSA1
Part Status — Active
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) — 190 mA (Ta)
Power Dissipation (PD) — 500 mW (Ta)
RDS(on) Max — 6 Ω @ VGS = 10 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical and max VGS(th)]
Gate-Source Voltage Max (VGS) — ±20 V
Qualification — AEC-Q101 (automotive)
RoHS Compliance — Yes (Pb-free lead plating)

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