BSS127H6327XTSA2 vs BSS126H6327XTSA2 Perbandingan

Perbandingan bersamaan detil BSS127H6327XTSA2 dari Infineon dan BSS126H6327XTSA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS127H6327XTSA2 BSS126H6327XTSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel SIPMOS, enhancement mode N-Channel Depletion Mode
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) 21 mA (Ta) —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed ID limit] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 4.5 V (logic level, rated) —
On-State Resistance (RDS(on)) max 500 ohm at ID = 21 mA —
Total Power Dissipation (Ptot) 500 mW (Ta) —
Suhu Hubung Kerja -55 C to +150 C —
Paket SOT-23-3 (PG-SOT23) SOT-23-3 (PG-SOT23)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 3
dv/dt Rated Yes —
Automotive Qualification AEC-Q101 —
Status RoHS Compliant (lead-free) Compliant
Bebas Halogen Yes, per IEC 61249-2-21 Yes (Infineon 'green' package)
Level MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Drain-Source Voltage (VDS) Max — 600 V
Continuous Drain Current (ID) at Ta — 21 mA
Power Dissipation (PD) at Ta — 500 mW
On-Resistance (RDS(on)) Max — 500 ohm (typical for depletion-mode)
Gate-Source Voltage (VGS) Range — [DATA_NEEDED: VGS max/min]
Technology — SIPMOS (DMOS)
Rentang Suhu Kerja — -55C to +150C (junction, typical)
Configuration — Single
Channel Mode — Depletion (normally-on at VGS = 0)
Lead-Free — Yes

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