BSS127H6327XTSA2 vs BSS126H6327XTSA2 比較

詳細並排比較 BSS127H6327XTSA2 由 Infineon 與 BSS126H6327XTSA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSS127H6327XTSA2 BSS127H6327XTSA2 - 600V N-Ch MOSFET, 21mA, SOT-23 | Infineon

BSS127H6327XTSA2 - 600V N-Ch MOSFET, 21mA, SOT-23 | Infineon

BSS127H6327XTSA2 ✓ 啟用中
Infineon
BSS126H6327XTSA2 BSS126H6327XTSA2 - 600V N-Ch Depletion MOSFET SOT-23 | Infineon

BSS126H6327XTSA2 - 600V N-Ch Depletion MOSFET SOT-23 | Infineon

BSS126H6327XTSA2 ✓ 啟用中

規格比較

參數 BSS127H6327XTSA2 BSS126H6327XTSA2
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel SIPMOS, enhancement mode N-Channel Depletion Mode
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) 21 mA (Ta) —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed ID limit] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 4.5 V (logic level, rated) —
On-State Resistance (RDS(on)) max 500 ohm at ID = 21 mA —
Total Power Dissipation (Ptot) 500 mW (Ta) —
工作接面溫度 -55 C to +150 C —
封裝 SOT-23-3 (PG-SOT23) SOT-23-3 (PG-SOT23)
安裝類型 Surface Mount Surface Mount
腳位數 3 3
dv/dt Rated Yes —
Automotive Qualification AEC-Q101 —
RoHS 狀態 Compliant (lead-free) Compliant
無鹵素 Yes, per IEC 61249-2-21 Yes (Infineon 'green' package)
MSL 等級 [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Drain-Source Voltage (VDS) Max — 600 V
Continuous Drain Current (ID) at Ta — 21 mA
Power Dissipation (PD) at Ta — 500 mW
On-Resistance (RDS(on)) Max — 500 ohm (typical for depletion-mode)
Gate-Source Voltage (VGS) Range — [DATA_NEEDED: VGS max/min]
Technology — SIPMOS (DMOS)
工作溫度範圍 — -55C to +150C (junction, typical)
Configuration — Single
Channel Mode — Depletion (normally-on at VGS = 0)
Lead-Free — Yes

資料表與資源

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