BSS192PH6327FTSA1 vs BSS87H6327FTSA1 Perbandingan

Perbandingan bersamaan detil BSS192PH6327FTSA1 dari Infineon dan BSS87H6327FTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS192PH6327FTSA1 BSS87H6327FTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel N-Channel enhancement-mode
Technology MOSFET (Metal Oxide) —
Drain-to-Source Voltage (Vdss) 250 V —
Continuous Drain Current (Id) @ 25C 190 mA (Ta) —
Power Dissipation (Pd) 1 W (Ta) —
Drive Voltage (Max Rds On, Min Rds On) 2.8 V, 10 V —
Rds On (Max) @ Id, Vgs [DATA_NEEDED: Rds On max @ Vgs] —
Vgs(th) (Max) [DATA_NEEDED: gate threshold voltage max] —
Vgs(th) (Typ) [DATA_NEEDED: gate threshold voltage typ] —
Paket PG-SOT89 (SOT-89-3, 4-pin 3+Tab) PG-SOT89-4-2 (SOT-89)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: Tj max / operating temp] -55C to +150C (junction)
Automotive Qualification AEC-Q101 (per distributor listing) AEC-Q101 qualified
Series SIPMOS Small-Signal-Transistor —
Part Status Active —
Status RoHS [DATA_NEEDED: explicit RoHS status from datasheet] Compliant
Drain-Source Voltage (VDS) — 240 V
Continuous Drain Current (ID) — 260 mA (Ta)
Power Dissipation (PD) — 1 W (Ta)
Drain-Source On-Resistance (RDS(on)) — 6 ohm max at VGS=10V
Gate-Source Voltage (VGS) — +/-20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Jumlah Pin — 3 (Gate / Drain / Source)
Lead-Free / Pb-Free — Yes (Pb-free plating)
Level MSL — 1 (per JEDEC J-STD-020)
Process Technology — Vertical DMOS

Spek dan Sumber

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