BSS192PH6327FTSA1 vs BSS87H6327FTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS192PH6327FTSA1 disebabkan oleh Infineon dan BSS87H6327FTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS192PH6327FTSA1 BSS87H6327FTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel N-Channel enhancement-mode
Technology MOSFET (Metal Oxide) —
Drain-to-Source Voltage (Vdss) 250 V —
Continuous Drain Current (Id) @ 25C 190 mA (Ta) —
Power Dissipation (Pd) 1 W (Ta) —
Drive Voltage (Max Rds On, Min Rds On) 2.8 V, 10 V —
Rds On (Max) @ Id, Vgs [DATA_NEEDED: Rds On max @ Vgs] —
Vgs(th) (Max) [DATA_NEEDED: gate threshold voltage max] —
Vgs(th) (Typ) [DATA_NEEDED: gate threshold voltage typ] —
Kemasan PG-SOT89 (SOT-89-3, 4-pin 3+Tab) PG-SOT89-4-2 (SOT-89)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: Tj max / operating temp] -55C to +150C (junction)
Automotive Qualification AEC-Q101 (per distributor listing) AEC-Q101 qualified
Series SIPMOS Small-Signal-Transistor —
Part Status Active —
Status RoHS [DATA_NEEDED: explicit RoHS status from datasheet] Compliant
Drain-Source Voltage (VDS) — 240 V
Continuous Drain Current (ID) — 260 mA (Ta)
Power Dissipation (PD) — 1 W (Ta)
Drain-Source On-Resistance (RDS(on)) — 6 ohm max at VGS=10V
Gate-Source Voltage (VGS) — +/-20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Kiraan Pin — 3 (Gate / Drain / Source)
Lead-Free / Pb-Free — Yes (Pb-free plating)
Aras MSL — 1 (per JEDEC J-STD-020)
Process Technology — Vertical DMOS

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga