BSS192PH6327FTSA1 vs BSS87H6327FTSA1 比較
詳細並排比較 BSS192PH6327FTSA1 由 Infineon 與 BSS87H6327FTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSS192PH6327FTSA1 | BSS87H6327FTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | P-Channel | N-Channel enhancement-mode |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-to-Source Voltage (Vdss) | 250 V | — |
| Continuous Drain Current (Id) @ 25C | 190 mA (Ta) | — |
| Power Dissipation (Pd) | 1 W (Ta) | — |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8 V, 10 V | — |
| Rds On (Max) @ Id, Vgs | [DATA_NEEDED: Rds On max @ Vgs] | — |
| Vgs(th) (Max) | [DATA_NEEDED: gate threshold voltage max] | — |
| Vgs(th) (Typ) | [DATA_NEEDED: gate threshold voltage typ] | — |
| 封裝 | PG-SOT89 (SOT-89-3, 4-pin 3+Tab) | PG-SOT89-4-2 (SOT-89) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | [DATA_NEEDED: Tj max / operating temp] | -55C to +150C (junction) |
| Automotive Qualification | AEC-Q101 (per distributor listing) | AEC-Q101 qualified |
| Series | SIPMOS Small-Signal-Transistor | — |
| Part Status | Active | — |
| RoHS 狀態 | [DATA_NEEDED: explicit RoHS status from datasheet] | Compliant |
| Drain-Source Voltage (VDS) | — | 240 V |
| Continuous Drain Current (ID) | — | 260 mA (Ta) |
| Power Dissipation (PD) | — | 1 W (Ta) |
| Drain-Source On-Resistance (RDS(on)) | — | 6 ohm max at VGS=10V |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| 腳位數 | — | 3 (Gate / Drain / Source) |
| Lead-Free / Pb-Free | — | Yes (Pb-free plating) |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |
| Process Technology | — | Vertical DMOS |