BSS214NWH6327XTSA1 vs BSR315PH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS214NWH6327XTSA1 dari Infineon dan BSR315PH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSS214NWH6327XTSA1 BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSS214NWH6327XTSA1 BSR315PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSS214NWH6327XTSA1 BSR315PH6327XTSA1
Series OptiMOS OptiMOS P-Channel
FET Type N-Channel P-Channel, Enhancement Mode
Technology MOSFET (Metal Oxide) —
Drain-to-Source Voltage (Vdss) 20 V —
Continuous Drain Current (Id) @ 25C 1.5 A —
Rds(on) Max @ Vgs=4.5V 250 mOhm —
Drive Voltage (Max Rds On, Min Rds On) 2.5 V, 4.5 V —
Power Dissipation (Pd) @ Ta=25C 500 mW —
Paket PG-SOT323 (SOT-323-3) PG-SC59-3 / SOT-23-3
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55C to +150C (junction) —
Qualification AEC-Q101 (Automotive) —
Status RoHS Compliant Compliant
Lead-Free Yes —
Drain-Source Voltage (VDS) — -60 V
Continuous Drain Current (ID) — -620 mA (Ta)
Power Dissipation (PD) — 500 mW (Ta)
On-State Resistance (RDS(on)) — 800 mOhm @ -620 mA, -10 V
Gate Threshold Voltage (VGS(th)) — ±20 V (max VGS)
Input Capacitance (Ciss) — 176 pF @ 25 V
Total Gate Charge (Qg) — 6 nC @ 10 V
Rentang Suhu Kerja — -55 C to +150 C (TJ)
Jumlah Pin — 3
Packaging — Tape & Reel (TR)
Automotive Qualified — Yes (per Infineon product family marking)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon