BSS214NWH6327XTSA1 vs BSR315PH6327XTSA1 比較
詳細並排比較 BSS214NWH6327XTSA1 由 Infineon 與 BSR315PH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSS214NWH6327XTSA1 | BSR315PH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSS214NWH6327XTSA1 | BSR315PH6327XTSA1 |
| Series | OptiMOS | OptiMOS P-Channel |
| FET Type | N-Channel | P-Channel, Enhancement Mode |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-to-Source Voltage (Vdss) | 20 V | — |
| Continuous Drain Current (Id) @ 25C | 1.5 A | — |
| Rds(on) Max @ Vgs=4.5V | 250 mOhm | — |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5 V, 4.5 V | — |
| Power Dissipation (Pd) @ Ta=25C | 500 mW | — |
| 封裝 | PG-SOT323 (SOT-323-3) | PG-SC59-3 / SOT-23-3 |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55C to +150C (junction) | — |
| Qualification | AEC-Q101 (Automotive) | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) | — | -620 mA (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| On-State Resistance (RDS(on)) | — | 800 mOhm @ -620 mA, -10 V |
| Gate Threshold Voltage (VGS(th)) | — | ±20 V (max VGS) |
| Input Capacitance (Ciss) | — | 176 pF @ 25 V |
| Total Gate Charge (Qg) | — | 6 nC @ 10 V |
| 工作溫度範圍 | — | -55 C to +150 C (TJ) |
| 腳位數 | — | 3 |
| Packaging | — | Tape & Reel (TR) |
| Automotive Qualified | — | Yes (per Infineon product family marking) |