BSS308PEH6327XTSA1 vs BSL316CH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS308PEH6327XTSA1 dari Infineon dan BSL316CH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS308PEH6327XTSA1 BSL316CH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS P (small signal / small power MOSFET) OptiMOS small-signal complementary MOSFET
Tipe Transistor P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -30 V 30 V
Continuous Drain Current (ID) -2 A (Ta) —
RDS(on) Max 80 mΩ at VGS = -10 V —
Gate-Source Voltage (VGS) Max +/-20 V —
Power Dissipation (PD) 500 mW (Ta) —
Rentang Suhu Kerja -55 °C to +150 °C —
Paket / Case PG-SOT23 (SOT-23-3) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 —
Qualification AEC-Q101 Automotive —
Status RoHS Compliant Compliant
Packaging Tape & Reel (T/R) —
Standard Reel Quantity 3000 pcs —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) min/typ/max]
Configuration — Complementary pair (1 N-channel + 1 P-channel in one package)
Continuous Drain Current (N-channel ID) — 1.4 A
Continuous Drain Current (P-channel ID) — 1.5 A
Total Power Dissipation (Ptot) — 500 mW
Paket — PG-TSOP6-6 (TSOP6, 6-pin)
Suhu Kerja — -55C to +150C (junction)
Technology — OptiMOS low-voltage MOSFET
Channel Type — N-channel + P-channel (dual)
Jumlah Pin — 6
Level MSL — [DATA_NEEDED: MSL level]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V/4.5V]

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