BSS308PEH6327XTSA1 vs BSL316CH6327XTSA1 比較

詳細並排比較 BSS308PEH6327XTSA1 由 Infineon 與 BSL316CH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSL316CH6327XTSA1 BSL316CH6327XTSA1 - 30V 1.5A Complementary MOSFET | Infineon

BSL316CH6327XTSA1 - 30V 1.5A Complementary MOSFET | Infineon

BSL316CH6327XTSA1 ✓ 啟用中

規格比較

參數 BSS308PEH6327XTSA1 BSL316CH6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS P (small signal / small power MOSFET) OptiMOS small-signal complementary MOSFET
電晶體類型 P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -30 V 30 V
Continuous Drain Current (ID) -2 A (Ta) —
RDS(on) Max 80 mΩ at VGS = -10 V —
Gate-Source Voltage (VGS) Max +/-20 V —
Power Dissipation (PD) 500 mW (Ta) —
工作溫度範圍 -55 °C to +150 °C —
封裝 / 外殼 PG-SOT23 (SOT-23-3) —
安裝類型 Surface Mount Surface Mount
腳位數 3 —
Qualification AEC-Q101 Automotive —
RoHS 狀態 Compliant Compliant
Packaging Tape & Reel (T/R) —
Standard Reel Quantity 3000 pcs —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) min/typ/max]
Configuration — Complementary pair (1 N-channel + 1 P-channel in one package)
Continuous Drain Current (N-channel ID) — 1.4 A
Continuous Drain Current (P-channel ID) — 1.5 A
Total Power Dissipation (Ptot) — 500 mW
封裝 — PG-TSOP6-6 (TSOP6, 6-pin)
工作溫度 — -55C to +150C (junction)
Technology — OptiMOS low-voltage MOSFET
Channel Type — N-channel + P-channel (dual)
腳位數 — 6
MSL 等級 — [DATA_NEEDED: MSL level]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V/4.5V]

資料表與資源

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