BSS806NH6327XTSA1 vs BSS806NEH6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSS806NH6327XTSA1 dari Infineon dan BSS806NEH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSS806NH6327XTSA1 | BSS806NEH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 2 (trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 20 V | 20 V (maximum) |
| Continuous Drain Current (ID, Ta) | 2.3 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Drain-Source On-Resistance (RDS(on) max) | 57 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 1.8 V rated (logic level) | — |
| Gate Drive (recommended VGS) | 1.8 V to 10 V | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | — |
| Power Dissipation (PD, Ta) | 500 mW | — |
| Rentang Suhu Kerja | -55 C to +150 C (junction) | [DATA_NEEDED: operating temperature range] |
| Paket | PG-SOT23-3 (SOT-23-3) | PG-SOT23 (SOT-23-3) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 (per JEDEC J-STD-020) | — |
| Status RoHS | Compliant (Pb-free plating) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSS806NEH6327XTSA1 |
| Tipe Transistor | — | N-Channel MOSFET |
| Mode of Operation | — | Enhancement-mode |
| Continuous Drain Current (ID) | — | 2.3 A (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| On-Resistance RDS(on) | — | 57 mOhm (maximum) |
| Jumlah Pin | — | 3 (Gate, Drain, Source) |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Yes (compliant) |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |