BSS806NH6327XTSA1 vs BSS806NEH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS806NH6327XTSA1 disebabkan oleh Infineon dan BSS806NEH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSS806NEH6327XTSA1 BSS806NEH6327XTSA1 - 20V N-Ch MOSFET 2.3A SOT-23 | Infineon

BSS806NEH6327XTSA1 - 20V N-Ch MOSFET 2.3A SOT-23 | Infineon

BSS806NEH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS806NH6327XTSA1 BSS806NEH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 2 (trench MOSFET) —
Drain-Source Voltage (VDS) 20 V 20 V (maximum)
Continuous Drain Current (ID, Ta) 2.3 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Drain-Source On-Resistance (RDS(on) max) 57 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 1.8 V rated (logic level) —
Gate Drive (recommended VGS) 1.8 V to 10 V —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] —
Power Dissipation (PD, Ta) 500 mW —
Gambaran Suhu Operasi -55 C to +150 C (junction) [DATA_NEEDED: operating temperature range]
Kemasan PG-SOT23-3 (SOT-23-3) PG-SOT23 (SOT-23-3)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant (Pb-free plating) —
Automotive Qualification AEC-Q101 qualified —
Manufacturer — Infineon Technologies
Part Number — BSS806NEH6327XTSA1
Jenis Transistor — N-Channel MOSFET
Mode of Operation — Enhancement-mode
Continuous Drain Current (ID) — 2.3 A (Ta)
Power Dissipation (PD) — 500 mW (Ta)
On-Resistance RDS(on) — 57 mOhm (maximum)
Kiraan Pin — 3 (Gate, Drain, Source)
Lead Plating — Pb-free
RoHS Compliance — Yes (compliant)
AEC-Q101 Qualification — Qualified (automotive grade)

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