BSZ0501NSIATMA1 vs BSZ215CHXTMA1 Perbandingan

Perbandingan bersamaan detil BSZ0501NSIATMA1 dari Infineon dan BSZ215CHXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSZ0501NSIATMA1 BSZ215CHXTMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ0501NSIATMA1 —
Product Family OptiMOS 5 (25V/30V) —
FET Type N-Channel N-Channel and P-Channel Complementary
Drain-Source Voltage (Vds) 30 V 20 V
Continuous Drain Current (Id) at TA=25C 25 A —
Continuous Drain Current (Id) at TC=25C 40 A —
Power Dissipation (Pd) at TA=25C 2.1 W —
Power Dissipation (Pd) at TC=25C 50 W —
Operating Mode Enhancement Mode —
Configuration Single with built-in diode —
Paket PG-TSDSON-8-FL (3.3 x 3.3 mm) PG-TSDSON-8 (PQFN 3.3 x 3.3)
Tipe Mounting Surface Mount Surface Mount
Number of Terminals 8 —
JESD-609 Code e3 (matte tin) —
Level MSL [DATA_NEEDED: MSL rating] —
Rds(on) at Vgs=10V (typ) [DATA_NEEDED: Rds(on) value] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Rentang Suhu Kerja [DATA_NEEDED: Tj max] -55C to +150C
Status RoHS Compliant Compliant
Series — OptiMOS
Continuous Drain Current - N-channel (Id) — 5.1 A
Continuous Drain Current - P-channel (Id) — 3.2 A
Power Dissipation (Pd) — 2.5 W
On-State Resistance - N-channel max (Rds(on)) — [DATA_NEEDED: N-channel Rds(on)]
On-State Resistance - P-channel max (Rds(on)) — [DATA_NEEDED: P-channel Rds(on)]
Technology — OptiMOS (enhancement mode)
Automotive Qualification — AEC-Q101 qualified
Lead-Free — Yes (100% lead-free)
Avalanche Rated — Yes

Spek dan Sumber

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