BSZ0501NSIATMA1 vs BSZ215CHXTMA1 比較
詳細並排比較 BSZ0501NSIATMA1 由 Infineon 與 BSZ215CHXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSZ0501NSIATMA1 | BSZ215CHXTMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ0501NSIATMA1 | — |
| Product Family | OptiMOS 5 (25V/30V) | — |
| FET Type | N-Channel | N-Channel and P-Channel Complementary |
| Drain-Source Voltage (Vds) | 30 V | 20 V |
| Continuous Drain Current (Id) at TA=25C | 25 A | — |
| Continuous Drain Current (Id) at TC=25C | 40 A | — |
| Power Dissipation (Pd) at TA=25C | 2.1 W | — |
| Power Dissipation (Pd) at TC=25C | 50 W | — |
| Operating Mode | Enhancement Mode | — |
| Configuration | Single with built-in diode | — |
| 封裝 | PG-TSDSON-8-FL (3.3 x 3.3 mm) | PG-TSDSON-8 (PQFN 3.3 x 3.3) |
| 安裝類型 | Surface Mount | Surface Mount |
| Number of Terminals | 8 | — |
| JESD-609 Code | e3 (matte tin) | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | — |
| Rds(on) at Vgs=10V (typ) | [DATA_NEEDED: Rds(on) value] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| 工作溫度範圍 | [DATA_NEEDED: Tj max] | -55C to +150C |
| RoHS 狀態 | Compliant | Compliant |
| Series | — | OptiMOS |
| Continuous Drain Current - N-channel (Id) | — | 5.1 A |
| Continuous Drain Current - P-channel (Id) | — | 3.2 A |
| Power Dissipation (Pd) | — | 2.5 W |
| On-State Resistance - N-channel max (Rds(on)) | — | [DATA_NEEDED: N-channel Rds(on)] |
| On-State Resistance - P-channel max (Rds(on)) | — | [DATA_NEEDED: P-channel Rds(on)] |
| Technology | — | OptiMOS (enhancement mode) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead-Free | — | Yes (100% lead-free) |
| Avalanche Rated | — | Yes |