BSZ110N08NS5ATMA1 vs BSZ130N03LSGATMA1 Perbandingan
Perbandingan bersamaan detil BSZ110N08NS5ATMA1 dari Infineon dan BSZ130N03LSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSZ130N03LSGATMA1 - 30V OptiMOS N-FET, 35A, PG-TSDSON-8 | Infineon
BSZ130N03LSGATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | BSZ110N08NS5ATMA1 | BSZ130N03LSGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 | OptiMOS 25V / 30V |
| Technology | OptiMOS 5 N-Channel Power MOSFET | — |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Tc | 40 A | — |
| On-Resistance RDS(on) max | 11 mΩ | — |
| Power Dissipation (PD) at Tc | 50 W | — |
| Paket | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) | PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Polarity | N-Channel | — |
| Configuration | Single MOSFET | — |
| Gate Drive Voltage (VGS) | [DATA_NEEDED: VGS rating] | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | -55 C to +150 C (junction) |
| Status RoHS | Compliant | Compliant |
| Level MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Polarity / Channel Type | — | N-Channel Enhancement Mode |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Ta=25 C) | — | 10 A |
| Arus Alir Berlanjut (TC=25°C) | — | 35 A |
| On-State Resistance Rds(on) max @ Vgs=10V | — | 13 mOhm |
| Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA | — | 2.2 V |
| Power Dissipation (Ta) | — | 2.1 W |
| Power Dissipation (Tc) | — | 25 W |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes |
| Qualification | — | Industrial / Commercial (non-automotive) |