BSZ110N08NS5ATMA1 vs BSZ130N03LSGATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSZ110N08NS5ATMA1 sa pamamagitan ng Infineon at BSZ130N03LSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSZ110N08NS5ATMA1 BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon

BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon

BSZ110N08NS5ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSZ110N08NS5ATMA1 BSZ130N03LSGATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 5 OptiMOS 25V / 30V
Technology OptiMOS 5 N-Channel Power MOSFET —
Drain-to-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at Tc 40 A —
On-Resistance RDS(on) max 11 mΩ —
Power Dissipation (PD) at Tc 50 W —
Packhaging PG-TSDSON-8-FL (PQFN 3.3 x 3.3) PG-TSDSON-8 (8-PowerTDFN, 5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Polarity N-Channel —
Configuration Single MOSFET —
Gate Drive Voltage (VGS) [DATA_NEEDED: VGS rating] —
Hanay ng Temperature na Operasyon [DATA_NEEDED: operating temperature range] -55 C to +150 C (junction)
Tindminan RoHS Compliant Compliant
Level ng MSL [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020)
Polarity / Channel Type — N-Channel Enhancement Mode
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Ta=25 C) — 10 A
Patuloy na Drain Current (TC=25°C) — 35 A
On-State Resistance Rds(on) max @ Vgs=10V — 13 mOhm
Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA — 2.2 V
Power Dissipation (Ta) — 2.1 W
Power Dissipation (Tc) — 25 W
Lead-Free — Yes
Wala sa Halogen — Yes
Qualification — Industrial / Commercial (non-automotive)

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