BSZ110N08NS5ATMA1 vs BSZ130N03LSGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ110N08NS5ATMA1 disebabkan oleh Infineon dan BSZ130N03LSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSZ130N03LSGATMA1 - 30V OptiMOS N-FET, 35A, PG-TSDSON-8 | Infineon
BSZ130N03LSGATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSZ110N08NS5ATMA1 | BSZ130N03LSGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 | OptiMOS 25V / 30V |
| Technology | OptiMOS 5 N-Channel Power MOSFET | — |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Tc | 40 A | — |
| On-Resistance RDS(on) max | 11 mΩ | — |
| Power Dissipation (PD) at Tc | 50 W | — |
| Kemasan | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) | PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Polarity | N-Channel | — |
| Configuration | Single MOSFET | — |
| Gate Drive Voltage (VGS) | [DATA_NEEDED: VGS rating] | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: operating temperature range] | -55 C to +150 C (junction) |
| Status RoHS | Compliant | Compliant |
| Aras MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Polarity / Channel Type | — | N-Channel Enhancement Mode |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Ta=25 C) | — | 10 A |
| Arus Kumpal Tetap (TC=25°C) | — | 35 A |
| On-State Resistance Rds(on) max @ Vgs=10V | — | 13 mOhm |
| Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA | — | 2.2 V |
| Power Dissipation (Ta) | — | 2.1 W |
| Power Dissipation (Tc) | — | 25 W |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |
| Qualification | — | Industrial / Commercial (non-automotive) |