BSZ120P03NS3GATMA1 vs BSZ0901NSIATMA1 Perbandingan

Perbandingan bersamaan detil BSZ120P03NS3GATMA1 dari Infineon dan BSZ0901NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSZ120P03NS3GATMA1 BSZ0901NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel —
Drain-Source Voltage (VDS) -30 V 30 V
Continuous Drain Current (TA=25C) -11 A —
Continuous Drain Current (TC=25C) -40 A —
Power Dissipation (TA=25C) 2.1 W —
Power Dissipation (TC=25C) 52 W —
On-Resistance RDS(on) max @ VGS=-10V 12 mOhm —
On-Resistance RDS(on) max @ VGS=-4.5V [DATA_NEEDED: RDS(on) at VGS=-4.5V] —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage VGS(th) typ -1.7 V —
Technology OptiMOS P3 OptiMOS trench N-channel MOSFET
Paket PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
Rentang Suhu Kerja -55C to +150C -55 C to +150 C (typical MOSFET range)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 —
Status RoHS Compliant Compliant
Lead-Free Yes —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
Manufacturer — Infineon Technologies
Part Number — BSZ0901NSIATMA1
Series — OptiMOS 25V
FET Type — N-Channel
Continuous Drain Current (ID) at Ta=25C — 25 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
Jumlah Pin — 8
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
On-Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge Qg]
Packaging — Tape & Reel (ATMA1 suffix = 13-inch reel)

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