BSZ120P03NS3GATMA1 vs BSZ0901NSIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ120P03NS3GATMA1 disebabkan oleh Infineon dan BSZ0901NSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSZ120P03NS3GATMA1 BSZ0901NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel —
Drain-Source Voltage (VDS) -30 V 30 V
Continuous Drain Current (TA=25C) -11 A —
Continuous Drain Current (TC=25C) -40 A —
Power Dissipation (TA=25C) 2.1 W —
Power Dissipation (TC=25C) 52 W —
On-Resistance RDS(on) max @ VGS=-10V 12 mOhm —
On-Resistance RDS(on) max @ VGS=-4.5V [DATA_NEEDED: RDS(on) at VGS=-4.5V] —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage VGS(th) typ -1.7 V —
Technology OptiMOS P3 OptiMOS trench N-channel MOSFET
Kemasan PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
Gambaran Suhu Operasi -55C to +150C -55 C to +150 C (typical MOSFET range)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 —
Status RoHS Compliant Compliant
Lead-Free Yes —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
Manufacturer — Infineon Technologies
Part Number — BSZ0901NSIATMA1
Series — OptiMOS 25V
FET Type — N-Channel
Continuous Drain Current (ID) at Ta=25C — 25 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
Kiraan Pin — 8
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
On-Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge Qg]
Packaging — Tape & Reel (ATMA1 suffix = 13-inch reel)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga