BSZ120P03NS3GATMA1 vs BSZ0901NSIATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ120P03NS3GATMA1 sa pamamagitan ng Infineon at BSZ0901NSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSZ120P03NS3GATMA1 - -30V P-Ch 12mOhm OptiMOS P3 MOSFET | Infineon
BSZ120P03NS3GATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | BSZ120P03NS3GATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -30 V | 30 V |
| Continuous Drain Current (TA=25C) | -11 A | — |
| Continuous Drain Current (TC=25C) | -40 A | — |
| Power Dissipation (TA=25C) | 2.1 W | — |
| Power Dissipation (TC=25C) | 52 W | — |
| On-Resistance RDS(on) max @ VGS=-10V | 12 mOhm | — |
| On-Resistance RDS(on) max @ VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage VGS(th) typ | -1.7 V | — |
| Technology | OptiMOS P3 | OptiMOS trench N-channel MOSFET |
| Packhaging | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Hanay ng Temperature na Operasyon | -55C to +150C | -55 C to +150 C (typical MOSFET range) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSZ0901NSIATMA1 |
| Series | — | OptiMOS 25V |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 25 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 69 W |
| Bilang ng Pin | — | 8 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Packaging | — | Tape & Reel (ATMA1 suffix = 13-inch reel) |