BSZ180P03NS3EGATMA1 vs BSZ15DC02KDHXTMA1 Perbandingan

Perbandingan bersamaan detil BSZ180P03NS3EGATMA1 dari Infineon dan BSZ15DC02KDHXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSZ180P03NS3EGATMA1 BSZ15DC02KDHXTMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor P-Channel MOSFET N-Channel + P-Channel (complementary pair)
Technology OptiMOS P3 OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch)
Drain-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) - Ta 9 A —
Continuous Drain Current (ID) - Tc 39.5 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-State Resistance (RDS(on)) max 18 mΩ @ VGS = -10 V —
Gate-Source Threshold (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Gate Charge (QG) total [DATA_NEEDED: QG total] —
Power Dissipation (Ta) 2.1 W —
Power Dissipation (Tc) 40 W —
Rentang Suhu Kerja -55°C to +150°C (TJ) —
Paket PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant —
Level MSL 1 —
Lead-Free Yes —
Manufacturer — Infineon Technologies
Part Number — BSZ15DC02KDHXTMA1
Drain-to-Source Voltage (VDS) Max — 20 V
N-Channel Continuous Drain Current (ID) — 5.1 A
P-Channel Continuous Drain Current (ID) — 3.2 A
N-Channel RDS(on) Max — [DATA_NEEDED: N-ch RDS(on) value in mohm]
P-Channel RDS(on) Max — 55 mOhm (per Infineon part summary)
Gate Drive Level — Super Logic level, 2.5 V rated
Configuration — Common drain (back-to-back source pair)
Total Package Power Dissipation (PD) — 2.5 W @ 25 C (per DigiKey listing)
Suhu Hubung Kerja — -55 C to +175 C
Avalanche Rated — Yes
Automotive Qualification — AEC-Q101 qualified
Lead-Free / RoHS — Yes / RoHS compliant

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