BSZ180P03NS3EGATMA1 vs BSZ15DC02KDHXTMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSZ180P03NS3EGATMA1 sa pamamagitan ng Infineon at BSZ15DC02KDHXTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSZ180P03NS3EGATMA1 BSZ180P03NS3EGATMA1 - 30V P-Channel OptiMOS P3 MOSFET | Infineon

BSZ180P03NS3EGATMA1 - 30V P-Channel OptiMOS P3 MOSFET | Infineon

BSZ180P03NS3EGATMA1 ✓ Nakahanda
Infineon
BSZ15DC02KDHXTMA1 BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon

BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon

BSZ15DC02KDHXTMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSZ180P03NS3EGATMA1 BSZ15DC02KDHXTMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor P-Channel MOSFET N-Channel + P-Channel (complementary pair)
Technology OptiMOS P3 OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch)
Drain-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) - Ta 9 A —
Continuous Drain Current (ID) - Tc 39.5 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-State Resistance (RDS(on)) max 18 mΩ @ VGS = -10 V —
Gate-Source Threshold (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Gate Charge (QG) total [DATA_NEEDED: QG total] —
Power Dissipation (Ta) 2.1 W —
Power Dissipation (Tc) 40 W —
Hanay ng Temperature na Operasyon -55°C to +150°C (TJ) —
Packhaging PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant —
Level ng MSL 1 —
Lead-Free Yes —
Manufacturer — Infineon Technologies
Part Number — BSZ15DC02KDHXTMA1
Drain-to-Source Voltage (VDS) Max — 20 V
N-Channel Continuous Drain Current (ID) — 5.1 A
P-Channel Continuous Drain Current (ID) — 3.2 A
N-Channel RDS(on) Max — [DATA_NEEDED: N-ch RDS(on) value in mohm]
P-Channel RDS(on) Max — 55 mOhm (per Infineon part summary)
Gate Drive Level — Super Logic level, 2.5 V rated
Configuration — Common drain (back-to-back source pair)
Total Package Power Dissipation (PD) — 2.5 W @ 25 C (per DigiKey listing)
Temperature ng Junction na Operasyon — -55 C to +175 C
Avalanche Rated — Yes
Automotive Qualification — AEC-Q101 qualified
Lead-Free / RoHS — Yes / RoHS compliant

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