BSZ180P03NS3EGATMA1 vs BSZ15DC02KDHXTMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ180P03NS3EGATMA1 disebabkan oleh Infineon dan BSZ15DC02KDHXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSZ180P03NS3EGATMA1 BSZ15DC02KDHXTMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor P-Channel MOSFET N-Channel + P-Channel (complementary pair)
Technology OptiMOS P3 OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch)
Drain-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) - Ta 9 A —
Continuous Drain Current (ID) - Tc 39.5 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-State Resistance (RDS(on)) max 18 mΩ @ VGS = -10 V —
Gate-Source Threshold (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Gate Charge (QG) total [DATA_NEEDED: QG total] —
Power Dissipation (Ta) 2.1 W —
Power Dissipation (Tc) 40 W —
Gambaran Suhu Operasi -55°C to +150°C (TJ) —
Kemasan PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant —
Aras MSL 1 —
Lead-Free Yes —
Manufacturer — Infineon Technologies
Part Number — BSZ15DC02KDHXTMA1
Drain-to-Source Voltage (VDS) Max — 20 V
N-Channel Continuous Drain Current (ID) — 5.1 A
P-Channel Continuous Drain Current (ID) — 3.2 A
N-Channel RDS(on) Max — [DATA_NEEDED: N-ch RDS(on) value in mohm]
P-Channel RDS(on) Max — 55 mOhm (per Infineon part summary)
Gate Drive Level — Super Logic level, 2.5 V rated
Configuration — Common drain (back-to-back source pair)
Total Package Power Dissipation (PD) — 2.5 W @ 25 C (per DigiKey listing)
Suhu Hubungan Operasi — -55 C to +175 C
Avalanche Rated — Yes
Automotive Qualification — AEC-Q101 qualified
Lead-Free / RoHS — Yes / RoHS compliant

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