BTT62001ENAXUMA1 vs BTT60101ERBXUMA1 Perbandingan

Perbandingan bersamaan detil BTT62001ENAXUMA1 dari Infineon dan BTT60101ERBXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BTT62001ENAXUMA1 BTT60101ERBXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Smart High-Side Power Switch Smart High-Side Power Switch
Topologi 1:1 N-Channel High-Side N-Channel vertical MOSFET with charge pump
On-State Resistance (Ron) 200 mΩ (typical) —
Continuous Load Current 1.5 A 9 A
Operating Voltage Range 5 V to 48 V —
Technology Smart6 HV (N-channel vertical MOSFET with charge pump) —
Paket PG-TDSO-8-31 (DSO-8 with exposed pad) PG-TDSO-14-11 (SOIC-14-EP, Exposed Pad)
Tipe Mounting Surface Mount Surface Mount
Protection Features Overload, Short-Circuit, Over-Temperature, Over-Voltage, Reverse Battery —
Diagnostic Output Current Sense (IS) pin Status pin (ST) and current sense (IS)
Lamp Drive Capability 1 × R10W at 24 V or 1 × R5W at 12 V —
Suhu Kerja -40 °C to +150 °C junction —
Level MSL 2A (4 weeks) —
ECCN EAR99 —
REACH Status REACH Unaffected —
Number of Channels — 1
On-State Resistance (Typ) — 10 mΩ
Supply Voltage Range — 5 V to 36 V
Reverse Battery Protection — up to -36 V
Rentang Suhu Kerja — -40 °C to +150 °C
Input Control Logic — Active High
Process Technology — Infineon Smart6
Targeted Lamp Load — 5 × P21W 24 V or 1 × H55W 12 V
Compliance — RoHS

Spek dan Sumber

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