BTT62001ENAXUMA1 vs BTT60101ERBXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BTT62001ENAXUMA1 disebabkan oleh Infineon dan BTT60101ERBXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BTT62001ENAXUMA1 BTT60101ERBXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Smart High-Side Power Switch Smart High-Side Power Switch
Tetstruktur 1:1 N-Channel High-Side N-Channel vertical MOSFET with charge pump
On-State Resistance (Ron) 200 mΩ (typical) —
Continuous Load Current 1.5 A 9 A
Operating Voltage Range 5 V to 48 V —
Technology Smart6 HV (N-channel vertical MOSFET with charge pump) —
Kemasan PG-TDSO-8-31 (DSO-8 with exposed pad) PG-TDSO-14-11 (SOIC-14-EP, Exposed Pad)
Jenis Pemasangan Surface Mount Surface Mount
Protection Features Overload, Short-Circuit, Over-Temperature, Over-Voltage, Reverse Battery —
Diagnostic Output Current Sense (IS) pin Status pin (ST) and current sense (IS)
Lamp Drive Capability 1 × R10W at 24 V or 1 × R5W at 12 V —
Suhu Operasi -40 °C to +150 °C junction —
Aras MSL 2A (4 weeks) —
ECCN EAR99 —
REACH Status REACH Unaffected —
Number of Channels — 1
On-State Resistance (Typ) — 10 mΩ
Supply Voltage Range — 5 V to 36 V
Reverse Battery Protection — up to -36 V
Gambaran Suhu Operasi — -40 °C to +150 °C
Input Control Logic — Active High
Process Technology — Infineon Smart6
Targeted Lamp Load — 5 × P21W 24 V or 1 × H55W 12 V
Compliance — RoHS

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