BTT62001ENAXUMA1 vs BTT60101ERBXUMA1 比較

詳細並排比較 BTT62001ENAXUMA1 由 Infineon 與 BTT60101ERBXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 BTT62001ENAXUMA1 BTT60101ERBXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Smart High-Side Power Switch Smart High-Side Power Switch
拓撲 1:1 N-Channel High-Side N-Channel vertical MOSFET with charge pump
On-State Resistance (Ron) 200 mΩ (typical) —
Continuous Load Current 1.5 A 9 A
Operating Voltage Range 5 V to 48 V —
Technology Smart6 HV (N-channel vertical MOSFET with charge pump) —
封裝 PG-TDSO-8-31 (DSO-8 with exposed pad) PG-TDSO-14-11 (SOIC-14-EP, Exposed Pad)
安裝類型 Surface Mount Surface Mount
Protection Features Overload, Short-Circuit, Over-Temperature, Over-Voltage, Reverse Battery —
Diagnostic Output Current Sense (IS) pin Status pin (ST) and current sense (IS)
Lamp Drive Capability 1 × R10W at 24 V or 1 × R5W at 12 V —
工作溫度 -40 °C to +150 °C junction —
MSL 等級 2A (4 weeks) —
ECCN EAR99 —
REACH Status REACH Unaffected —
Number of Channels — 1
On-State Resistance (Typ) — 10 mΩ
Supply Voltage Range — 5 V to 36 V
Reverse Battery Protection — up to -36 V
工作溫度範圍 — -40 °C to +150 °C
Input Control Logic — Active High
Process Technology — Infineon Smart6
Targeted Lamp Load — 5 × P21W 24 V or 1 × H55W 12 V
Compliance — RoHS

資料表與資源

瀏覽所有產品 建立 BOM 索取報價