CGD65A055S2 vs CGD65C055SP2 Perbandingan

Perbandingan bersamaan detil CGD65A055S2 dari Cambridge GaN Devices dan CGD65C055SP2 dari Cambridge GaN Devices. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Cambridge GaN Devices
CGD65C055SP2 CGD65C055SP2 - 650V 27A GaN HEMT, BHDFN-9-1 | Cambridge GaN Devices

CGD65C055SP2 - 650V 27A GaN HEMT, BHDFN-9-1 | Cambridge GaN Devices

CGD65C055SP2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum CGD65A055S2 CGD65C055SP2
Merek Cambridge GaN Devices Cambridge GaN Devices
Kategori Transistors MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Cambridge GaN Devices Cambridge GaN Devices (CGD)
Technology GaN-on-Si HEMT (enhancement mode) ICeGaN® GaN-on-Si, enhancement-mode
Drain-to-Source Voltage (VDS) 650 V —
On-Resistance (RDS(on)) 55 mΩ —
Arus Alir Berlanjut (TC=25°C) 27 A —
Gate Technology ICeGaN™ (standard-driver compatible) —
Current Sense Pin Yes (integrated CS output) —
Integrated Protection Circuit NL³ (non-linear low-loss) —
Reverse Recovery Charge (Qrr) 0 nC (zero, typical for GaN) —
Paket 16-pin DFN 8x8 mm BHDFN-9-1 (Bottom-side cooled, wettable flank)
Tipe Mounting Surface Mount Surface Mount
Channel Type N-Channel N-Channel
Operating Mode Enhancement-mode (normally-off) —
Status RoHS Compliant (lead-free) Compliant
Polarity Single FET —
Part Number — CGD65C055SP2
Tipe Transistor — N-Channel GaN HEMT (Enhancement Mode, Normally-Off)
Drain-Source Voltage (V_DS max) — 650 V
Continuous Drain Current (I_D) — 27 A
On-Resistance (R_DS(on)) — 55 mΩ
Gate Threshold Voltage (V_TH) — 3 V
Gate Drive Voltage Range — 9 V to 20 V
Gate Turn-Off Voltage — 0 V (genuine 0 V turn-off per ICeGaN)
Rentang Suhu Kerja — [DATA_NEEDED: operating temperature range]
Thermal Resistance Junction-to-Case (R_thJC) — [DATA_NEEDED: R_thJC in C/W]
Lead-Free — Yes
Level MSL — [DATA_NEEDED: MSL level]

Spek dan Sumber

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