EP3SE260H780C4L vs EP3SE260H780C3 Perbandingan

Perbandingan bersamaan detil EP3SE260H780C4L dari Intel dan EP3SE260H780C3 dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum EP3SE260H780C4L EP3SE260H780C3
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup NRND Aktif
Family Stratix III E —
Logic Elements 255,000 255,000
LABs/CLBs 10,200 —
Total RAM Bits 16,672,768 (16.7 Mbit) —
User I/O Count 488 —
Paket 780-ball FCBGA (HBGA 33x33 mm) 780-ball FCBGA (HBGA), flip-chip
Speed Grade C4 (middle/slow tier) C3
Core Voltage 0.9 V (nominal) —
Suhu Hubung Kerja 0C to +85C (commercial) —
Tipe Mounting Surface Mount (flip-chip BGA) Surface Mount (BGA)
Level MSL [DATA_NEEDED: MSL level] —
Status RoHS Compliant (lead-free per datasheet) Compliant (per product listings)
Transceivers Up to 24 multi-gigabit transceivers —
Memory Interface DDR3, DDR2, QDRII+, RLDRAM II controllers —
Configuration Mode PS, FPP, JTAG with EPCS/EPCQ —
Device Family — Stratix III Enhanced (Stratix III E)
Series — EP3SE
Logic Array Blocks (LABs) — 10200
Embedded Memory — 16,672,768 bits (16.67 Mbit)
User I/Os — 488
Operating Voltage (Core) — 0.9 V
Operating Voltage (Auxiliary) — 1.1 V
Process Technology — 65 nm CMOS
Suhu Kerja — Commercial, 0C to +85C
Maximum Core Frequency — 500 MHz
Tingkat Sensitivitas Kekeringan (MSL) — 3 (168 hours)
Packaging Type — Tray
Configuration Memory Support — Fast passive parallel, JTAG, Active Serial

Spek dan Sumber

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