EP3SE260H780C4L vs EP3SE260H780C3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE260H780C4L sa pamamagitan ng Intel at EP3SE260H780C3 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3SE260H780C4L | EP3SE260H780C3 |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | NRND | Aktibo |
| Family | Stratix III E | — |
| Logic Elements | 255,000 | 255,000 |
| LABs/CLBs | 10,200 | — |
| Total RAM Bits | 16,672,768 (16.7 Mbit) | — |
| User I/O Count | 488 | — |
| Packhaging | 780-ball FCBGA (HBGA 33x33 mm) | 780-ball FCBGA (HBGA), flip-chip |
| Speed Grade | C4 (middle/slow tier) | C3 |
| Core Voltage | 0.9 V (nominal) | — |
| Temperature ng Junction na Operasyon | 0C to +85C (commercial) | — |
| Uri ng Pagpapasok | Surface Mount (flip-chip BGA) | Surface Mount (BGA) |
| Level ng MSL | [DATA_NEEDED: MSL level] | — |
| Tindminan RoHS | Compliant (lead-free per datasheet) | Compliant (per product listings) |
| Transceivers | Up to 24 multi-gigabit transceivers | — |
| Memory Interface | DDR3, DDR2, QDRII+, RLDRAM II controllers | — |
| Configuration Mode | PS, FPP, JTAG with EPCS/EPCQ | — |
| Device Family | — | Stratix III Enhanced (Stratix III E) |
| Series | — | EP3SE |
| Logic Array Blocks (LABs) | — | 10200 |
| Embedded Memory | — | 16,672,768 bits (16.67 Mbit) |
| User I/Os | — | 488 |
| Operating Voltage (Core) | — | 0.9 V |
| Operating Voltage (Auxiliary) | — | 1.1 V |
| Process Technology | — | 65 nm CMOS |
| Temperature na Operasyon | — | Commercial, 0C to +85C |
| Maximum Core Frequency | — | 500 MHz |
| Level ng Sensitivity sa Asid ng Moisture (MSL) | — | 3 (168 hours) |
| Packaging Type | — | Tray |
| Configuration Memory Support | — | Fast passive parallel, JTAG, Active Serial |