H5AN4G8NBJR-PBC vs H5AN4G8NBJR-VKI Perbandingan
Perbandingan bersamaan detil H5AN4G8NBJR-PBC dari SK hynix dan H5AN4G8NBJR-VKI dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5AN4G8NBJR-PBC | H5AN4G8NBJR-VKI |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Memory Density | 4 Gbit | — |
| Organisasi | 512M x 8 | 512M x 8 |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Tipe Antarmuka | Parallel, JEDEC DDR4 | — |
| Supply Voltage VDD | 1.2 V | — |
| Supply Voltage VDDQ | 1.2 V | — |
| Speed Grade | PBC | V (2666) |
| Clock Frequency | [DATA_NEEDED: Clock Frequency] | — |
| CAS Latency (CL) | [DATA_NEEDED: CAS Latency] | — |
| Paket | 78-ball FBGA | FBGA-78 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Normal Operating Case Temperature | 0C to 85C | — |
| Extended Temperature Range | up to 95C case (with increased refresh) | — |
| Lead Free | Yes | — |
| Bebas Halogen | Yes | — |
| Refresh | 8n prefetch, standard/auto refresh per DDR4 JEDEC | [DATA_NEEDED: Refresh specification] |
| Density | — | 4 Gb |
| Laju Data | — | 2666 Mbps |
| Tegangan Pemuat | — | 1.2 V |
| I/O Voltage | — | 1.2 V (SSTL12) |
| Temperature Grade | — | Industrial (I suffix) |
| Architecture | — | CMOS, 8n prefetch, bank groups |
| Termination | — | On-Die Termination (ODT) |
| DBI Support | — | Yes (Data Bus Inversion / DM) |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Suhu Kerja | — | [DATA_NEEDED: Operating Temperature] |
| Status RoHS | — | [DATA_NEEDED: RoHS Status] |