H5AN4G8NBJR-RDC vs H5AN4G8NBJR-UHCR Perbandingan

Perbandingan bersamaan detil H5AN4G8NBJR-RDC dari SK hynix dan H5AN4G8NBJR-UHCR dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

SK hynix
H5AN4G8NBJR-UHCR H5AN4G8NBJR-UHCR - 4Gb DDR4 SDRAM 2400 | SK hynix

H5AN4G8NBJR-UHCR - 4Gb DDR4 SDRAM 2400 | SK hynix

H5AN4G8NBJR-UHCR ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum H5AN4G8NBJR-RDC H5AN4G8NBJR-UHCR
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori DDR4 SDRAM DDR4 SDRAM
Density 4 Gbit 4 Gbit
Organisasi 512M x 8 512M x 8
Antarmuka DDR4 (Double Data Rate IV) DDR4 SSTL12
Paket 78-ball FBGA 78-ball FBGA (11 mm x 7.5 mm)
Tipe Mounting Surface Mount Surface Mount (BGA solder-down)
Tegangan Pemuat [DATA_NEEDED: VDD supply voltage] 1.2 V (VDD)
Laju Data [DATA_NEEDED: speed grade Mbps] —
Bank Architecture 8 banks with 4 bank groups (x8) —
Refresh Auto-refresh and self-refresh [DATA_NEEDED: refresh rate 1x/2x specification]
Temperature Grade [DATA_NEEDED: operating temperature range] —
Termination On-Die Termination (ODT) —
Status RoHS Lead-Free & Halogen-Free (RoHS Compliant) Compliant
Process Technology CMOS —
Manufacturer SK hynix —
Family Series H5AN4G4/8/6NBJR —
Speed Grade — UH (DDR4-2400 class, PC2400)
Internal Prefetch — 8n
Operating Case Temperature — -40C to +85C (industrial range)
Extended Temperature Range — Up to +95C case temperature (per datasheet conditions)
Lead Free — Yes
Bebas Halogen — Yes
Packaging Suffix — -R = Tape and Reel
Latensi CAS — [DATA_NEEDED: CL value for UH grade]

Spek dan Sumber

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